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IDW30C65D1XKSA1 - PG-TO247-3

IDW30C65D1XKSA1

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Infineon Technologies

650 V, 30 A RAPID 1 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-247 PACKAGE

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IDW30C65D1XKSA1 - PG-TO247-3

IDW30C65D1XKSA1

Active
Infineon Technologies

650 V, 30 A RAPID 1 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-247 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIDW30C65D1XKSA1
Current - Average Rectified (Io) (per Diode)15 A
Current - Reverse Leakage @ Vr40 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-247-3
Reverse Recovery Time (trr)71 ns
Speed200 mA, 500 ns
Supplier Device PackagePG-TO247-3-1
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 240$ 1.46
NewarkEach 1$ 3.85
10$ 3.38
100$ 2.36
720$ 1.88
1200$ 1.80
2640$ 1.71

Description

General part information

IDW30C65 Series

Rapid 1switching 650 V, 30 A emitter controlledsilicon power diodein common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.

Documents

Technical documentation and resources