Beta
⌘K
650 V, 30 A RAPID 1 EMITTER CONTROLLED POWER SILICON DIODE IN COMMON CATHODE CONFIGURATION IN A TO-247 PACKAGE
| Part | Package / Case | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Mounting Type | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-247-3 | PG-TO247-3-1 | -40 °C | 175 ░C | 71 ns | 1.7 V | 40 µA | 1 Pair Common Cathode | Through Hole | 200 mA 500 ns | 650 V | Standard | 15 A |