DMN3135LVT-7

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.3A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, TSOT26, 6 PIN

Search across all available documentation for this part.

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3.3A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, TSOT26, 6 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3135LVT-7

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.1 nC
Input Capacitance (Ciss) (Max) @ Vds	305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	840 mW
Rds On (Max) @ Id, Vgs	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Dual N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Configuration	FET Feature	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMN3135LVT-7	60 mOhm	3.5 A	SOT-23-6 Thin TSOT-23-6	Surface Mount	305 pF	2.2 V	2 N-Channel (Dual)	Logic Level Gate	MOSFET (Metal Oxide)	-55 °C	150 °C	840 mW	30 V	4.1 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

TN1.pdf

Technical documentation and resources