Catalog
Dual N-Channel Enhancement Mode MOSFET
Description
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Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id [Max] | Configuration | FET Feature | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 60 mOhm | 3.5 A | SOT-23-6 Thin TSOT-23-6 | Surface Mount | 305 pF | 2.2 V | 2 N-Channel (Dual) | Logic Level Gate | MOSFET (Metal Oxide) | -55 °C | 150 °C | 840 mW | 30 V | 4.1 nC |