TSM1NB60CP

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Taiwan Semiconductor Corporation

600V, 1.2A, SINGLE N-CHANNEL HIGH VOLTAGE MOSFETS

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Taiwan Semiconductor Corporation

600V, 1.2A, SINGLE N-CHANNEL HIGH VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

Specification	TSM1NB60CP

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	138 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs [Max]	10 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Technology
Taiwan Semiconductor Corporation TSM1NB60CP	10 V	10 Ohm	N-Channel	1 A	30 V	6.1 nC	138 pF	-55 °C	150 °C	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	39 W	Surface Mount	4.5 V	MOSFET (Metal Oxide)

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General part information

N-Channel 600 V 1A (Tc) 39W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources