Beta
⌘K
600V, 1.2A, SINGLE N-CHANNEL HIGH VOLTAGE MOSFETS
| Part | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Package / Case | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Mounting Type | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 10 V | 10 Ohm | N-Channel | 1 A | 30 V | 6.1 nC | 138 pF | -55 °C | 150 °C | TO-252 (DPAK) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 600 V | 39 W | Surface Mount | 4.5 V | MOSFET (Metal Oxide) |