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DMT8008LK3-13 - TO-252 D-Pak Top

DMT8008LK3-13

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Diodes Inc

80V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT8008LK3-13 - TO-252 D-Pak Top

DMT8008LK3-13

Active
Diodes Inc

80V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT8008LK3-13
Current - Continuous Drain (Id) @ 25°C95 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs41.2 nC
Input Capacitance (Ciss) (Max) @ Vds2345 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)1.7 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.51
5000$ 0.48
12500$ 0.47

Description

General part information

DMT8008LPS Series

This new generation MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in power management and load switches.