DMT8008LPS Series

80V N-Channel Enhancement Mode MOSFET

Catalog

80V N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id
Diodes Inc DMT8008LFG-7	-55 °C	150 °C	2.5 V	6.9 mOhm	37.7 nC	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	80 V	N-Channel	16 A 48 A	8-PowerVDFN	20 V	1 W 23.5 W	2254 pF	POWERDI3333-8
Diodes Inc DMT8008LK3-13	-55 °C	150 °C		7 mOhm	41.2 nC	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	80 V	N-Channel	95 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	1.7 W	2345 pF	TO-252 (DPAK)	2.8 V
Diodes Inc DMT8008LPS-13	-55 °C	150 °C	2.8 V	7.8 mOhm	41.2 nC	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	80 V	N-Channel	83 A	8-PowerTDFN	20 V	1.3 W 83 W	2345 pF	PowerDI5060-8

Catalog

80V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• High-Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in power management and load switches.