SSM6K809R,LF

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Toshiba Semiconductor and Storage

SMALL SIGNAL MOSFET N-CH VDSS=60

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Toshiba Semiconductor and Storage

SMALL SIGNAL MOSFET N-CH VDSS=60

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K809R,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	550 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Toshiba Semiconductor and Storage SSM6K809R,LF	1.5 W	20 V	175 °C	60 V	Surface Mount	N-Channel	6-SMD Flat Leads	6-TSOP-F	2.5 V	550 pF	MOSFET (Metal Oxide)	36 mOhm	9.3 nC	6 A	4 V	10 V

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General part information

N-Channel 60 V 6A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F

Technical documentation and resources