Beta
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SMALL SIGNAL MOSFET N-CH VDSS=60
| Part | Power Dissipation (Max) | Vgs (Max) | Operating Temperature | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Package / Case | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1.5 W | 20 V | 175 °C | 60 V | Surface Mount | N-Channel | 6-SMD Flat Leads | 6-TSOP-F | 2.5 V | 550 pF | MOSFET (Metal Oxide) | 36 mOhm | 9.3 nC | 6 A | 4 V | 10 V |