IMW65R030M1HXKSA1

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Infineon Technologies

THE IMW65R030M1H COOLSIC™ MOSFET 650V IS BUILT ON A STATE-OF-THE-ART TRENCH SEMICONDUCTOR.

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IMW65R030M1HXKSA1

Active

Infineon Technologies

THE IMW65R030M1H COOLSIC™ MOSFET 650V IS BUILT ON A STATE-OF-THE-ART TRENCH SEMICONDUCTOR.

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMW65R030M1HXKSA1

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1643 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	197 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	PG-TO247-3-41
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-2 V
Vgs(th) (Max) @ Id	5.7 V

IMW65R Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IMW65R030M1HXKSA1	18 V	5.7 V	N-Channel	42 mOhm	58 A	48 nC	650 V	-55 °C	175 ░C	PG-TO247-3-41	TO-247-3	20 V	-2 V	Through Hole	197 W	1643 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 12.20
		30	$ 7.36
		120	$ 6.37
Newark	Each	1	$ 16.90
		10	$ 15.15
		25	$ 13.39
		50	$ 11.63
		100	$ 11.43
		480	$ 11.25

Description

General part information

IMW65R Series

CoolSiC™ MOSFETtechnology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R030M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both thelowest losses in the applicationand thehighest reliability in operation.This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet