IMW65R Series

Catalog

THE IMW65R030M1H COOLSIC™ MOSFET 650V IS BUILT ON A STATE-OF-THE-ART TRENCH SEMICONDUCTOR.

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IMW65R030M1HXKSA1	18 V	5.7 V	N-Channel	42 mOhm	58 A	48 nC	650 V	-55 °C	175 ░C	PG-TO247-3-41	TO-247-3	20 V	-2 V	Through Hole	197 W	1643 pF