DMP3012LPS-13

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Diodes Inc

TRANS MOSFET P-CH -30V 13.2A 8-PIN POWERDI T/R

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Diodes Inc

TRANS MOSFET P-CH -30V 13.2A 8-PIN POWERDI T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3012LPS-13

Current - Continuous Drain (Id) @ 25°C	13.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	139 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	1.29 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	PowerDI5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

P-Channel Enhancement Mode MOSFET

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Diodes Inc DMP3012LPS-13	8-PowerTDFN	13.2 A	MOSFET (Metal Oxide)	30 V	P-Channel	PowerDI5060-8	2.1 V	-55 °C	150 °C	Surface Mount	20 V	4.5 V 10 V	139 nC	9 mOhm	1.29 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel Enhancement Mode MOSFET

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