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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | FET Type | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 8-PowerTDFN | 13.2 A | MOSFET (Metal Oxide) | 30 V | P-Channel | PowerDI5060-8 | 2.1 V | -55 °C | 150 °C | Surface Mount | 20 V | 4.5 V 10 V | 139 nC | 9 mOhm | 1.29 W |