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DMP2065UFDB-7 - U-DFN2020-6

DMP2065UFDB-7

Active
Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2065UFDB-7 - U-DFN2020-6

DMP2065UFDB-7

Active
Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP2065UFDB-7
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs9.1 nC
Input Capacitance (Ciss) (Max) @ Vds752 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power - Max [Max]1.54 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackageU-DFN2020-6 (Type B)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.41
100$ 0.28
500$ 0.22
1000$ 0.18
Digi-Reel® 1$ 0.48
10$ 0.41
100$ 0.28
500$ 0.22
1000$ 0.18
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
30000$ 0.14

Description

General part information

DMP2065UFDB Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.