DMP2065UFDB Series

Dual P-Channel Enhancement Mode MOSFET

Catalog

Dual P-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power - Max [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Configuration
Diodes Inc DMP2065UFDB-7	-55 °C	150 °C	U-DFN2020-6 (Type B)	1.54 W	20 V	4.5 A	MOSFET (Metal Oxide)	1 V	752 pF	6-UDFN Exposed Pad	50 mOhm	9.1 nC	Surface Mount	2 P-Channel

Catalog

Dual P-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.