SSM3K72CTC,L3F

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 150MA CST3C

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 150MA CST3C

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K72CTC,L3F

Current - Continuous Drain (Id) @ 25°C	150 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.35 nC
Input Capacitance (Ciss) (Max) @ Vds	17 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	3.9 Ohm
Supplier Device Package	CST3C
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Vgs (Max)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type
Toshiba Semiconductor and Storage SSM3K72CTC,L3F	20 V	150 °C	150 mA	60 V	500 mW	Surface Mount	SC-101 SOT-883	4.5 V 10 V	3.9 Ohm	0.35 nC	2.1 V	MOSFET (Metal Oxide)	17 pF	CST3C	N-Channel

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General part information

N-Channel 60 V 150mA (Ta) 500mW (Ta) Surface Mount CST3C

Technical documentation and resources