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MOSFET N-CH 60V 150MA CST3C
| Part | Vgs (Max) | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | 150 °C | 150 mA | 60 V | 500 mW | Surface Mount | SC-101 SOT-883 | 4.5 V 10 V | 3.9 Ohm | 0.35 nC | 2.1 V | MOSFET (Metal Oxide) | 17 pF | CST3C | N-Channel |