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STP4N90K5 - TO-220-3 Type A

STP4N90K5

Active
STMicroelectronics

N-CHANNEL 900 V, 1.90 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsUM1575+15
STP4N90K5 - TO-220-3 Type A

STP4N90K5

Active
STMicroelectronics

N-CHANNEL 900 V, 1.90 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsUM1575+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP4N90K5
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.3 nC
Input Capacitance (Ciss) (Max) @ Vds173 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs [Max]2.1 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 50$ 1.65
100$ 1.36
250$ 1.32
500$ 1.15
1250$ 0.98
2500$ 0.93
5000$ 0.89
NewarkEach 1$ 3.35
10$ 2.60
100$ 1.84
500$ 1.51
1000$ 1.43
2500$ 1.37
5000$ 1.34

Description

General part information

STP4N90K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.