STP4N90K5 Series

N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package

Catalog

N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package

Part	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STP4N90K5	N-Channel	5 V	173 pF	900 V	TO-220-3	-55 °C	150 °C	2.1 Ohm	TO-220	30 V	Through Hole	5.3 nC	60 W	3 A	MOSFET (Metal Oxide)	10 V

Catalog

N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.