STP20NM60FP

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STMicroelectronics

POWER MOSFET, N CHANNEL, 600 V, 20 A, 0.25 OHM, TO-220FP, THROUGH HOLE

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STP20NM60FP

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STMicroelectronics

POWER MOSFET, N CHANNEL, 600 V, 20 A, 0.25 OHM, TO-220FP, THROUGH HOLE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP20NM60FP

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STP20N60M2-EP Series

N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature
STMicroelectronics STP20NF20	10 V	-55 °C	175 ░C	TO-220-3	200 V	940 pF	Through Hole	20 V	TO-220	110 W	N-Channel	4 V	125 mOhm	18 A	39 nC	MOSFET (Metal Oxide)
STMicroelectronics STP20NM50FD	10 V	-65 °C	150 °C	TO-220-3	500 V	1380 pF	Through Hole	30 V	TO-220		N-Channel	5 V		20 A		MOSFET (Metal Oxide)	192 W	53 nC	250 mOhm
STMicroelectronics STP20N65M5	10 V	-55 °C	150 °C	TO-220-3	650 V	1345 pF	Through Hole	25 V	TO-220		N-Channel	5 V	190 mOhm	18 A	45 nC	MOSFET (Metal Oxide)	130 W
STMicroelectronics STP20NM60FD	10 V	-65 °C	150 °C	TO-220-3	600 V	1300 pF	Through Hole	30 V	TO-220		N-Channel	5 V	290 mOhm	20 A		MOSFET (Metal Oxide)	192 W
STMicroelectronics STP20N60M2-EP	10 V			TO-220-3	600 V		Through Hole	25 V	TO-220	110 W	N-Channel			13 A		MOSFET (Metal Oxide)
STMicroelectronics STP20NM60FP	10 V			TO-220-3 Full Pack	600 V	1500 pF	Through Hole	30 V	TO-220FP		N-Channel	5 V	290 mOhm	20 A		MOSFET (Metal Oxide)	45 W	54 nC		150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.72
		50	$ 5.36
		100	$ 4.80
		500	$ 4.23
		1000	$ 3.81
		2000	$ 3.57
LCSC	Piece	1	$ 5.39
		10	$ 4.67
		50	$ 4.24
		100	$ 3.81
		500	$ 3.61
		1000	$ 3.52
		2000	$ 3.48
Newark	Each	1	$ 6.49
		10	$ 5.60
		25	$ 4.89
		50	$ 4.53
		100	$ 3.94
		250	$ 3.36
		500	$ 3.20

Description

General part information

STP20N60M2-EP Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Documents

Technical documentation and resources

STP20NM60FP

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STP20NM60FP

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Technical Specifications

STP20N60M2-EP Series

Pricing

Description

STP20N60M2-EP Series

Documents

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Datasheet

STP20N60M2-EP Series