STP20N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.160 OHM TYP., 18 A MDMESH M5 POWER MOSFET IN TO-220 PACKAGE

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STP20N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.160 OHM TYP., 18 A MDMESH M5 POWER MOSFET IN TO-220 PACKAGE

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Technical Specifications

Parameters and characteristics for this part

Specification	STP20N65M5

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1345 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STP20N60M2-EP Series

N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature
STMicroelectronics STP20NF20	10 V	-55 °C	175 ░C	TO-220-3	200 V	940 pF	Through Hole	20 V	TO-220	110 W	N-Channel	4 V	125 mOhm	18 A	39 nC	MOSFET (Metal Oxide)
STMicroelectronics STP20NM50FD	10 V	-65 °C	150 °C	TO-220-3	500 V	1380 pF	Through Hole	30 V	TO-220		N-Channel	5 V		20 A		MOSFET (Metal Oxide)	192 W	53 nC	250 mOhm
STMicroelectronics STP20N65M5	10 V	-55 °C	150 °C	TO-220-3	650 V	1345 pF	Through Hole	25 V	TO-220		N-Channel	5 V	190 mOhm	18 A	45 nC	MOSFET (Metal Oxide)	130 W
STMicroelectronics STP20NM60FD	10 V	-65 °C	150 °C	TO-220-3	600 V	1300 pF	Through Hole	30 V	TO-220		N-Channel	5 V	290 mOhm	20 A		MOSFET (Metal Oxide)	192 W
STMicroelectronics STP20N60M2-EP	10 V			TO-220-3	600 V		Through Hole	25 V	TO-220	110 W	N-Channel			13 A		MOSFET (Metal Oxide)
STMicroelectronics STP20NM60FP	10 V			TO-220-3 Full Pack	600 V	1500 pF	Through Hole	30 V	TO-220FP		N-Channel	5 V	290 mOhm	20 A		MOSFET (Metal Oxide)	45 W	54 nC		150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.14
		50	$ 1.69
		100	$ 1.45
		500	$ 1.42

Description

General part information

STP20N60M2-EP Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

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STP20N65M5

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STP20N65M5

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Technical Specifications

STP20N60M2-EP Series

Pricing

Description

STP20N60M2-EP Series

Documents

Datasheet

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STP20N60M2-EP Series