DMPH4029LFGQ-13
ActiveDiodes Inc
40V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
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DMPH4029LFGQ-13
ActiveDiodes Inc
40V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMPH4029LFGQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A, 8 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1626 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 1.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 29 mOhm |
| Supplier Device Package | POWERDI3333-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
DMPH4029LFGQ Series
40V 175°C P-Channel Enhancement Mode MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | Technology | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 8 A 22 A | 34 nC | Surface Mount | 29 mOhm | 1626 pF | 1.2 W | 40 V | 8-PowerVDFN | MOSFET (Metal Oxide) | POWERDI3333-8 | -55 °C | 175 ░C | 20 V | P-Channel | 4.5 V 10 V | 3 V | ||
Diodes Inc | 8 A 22 A | 34 nC | Surface Mount | 29 mOhm | 1626 pF | 1.2 W | 40 V | 8-PowerVDFN | MOSFET (Metal Oxide) | POWERDI3333-8 | -55 °C | 175 ░C | 20 V | P-Channel | 4.5 V 10 V | 3 V | ||
Diodes Inc | 8 A 22 A | 34 nC | Surface Mount | 29 mOhm | 1626 pF | 1.2 W | 40 V | 8-PowerVDFN | MOSFET (Metal Oxide) | POWERDI3333-8 | -55 °C | 175 ░C | 20 V | P-Channel | 4.5 V 10 V | 3 V | AEC-Q101 | Automotive |
Diodes Inc | 8 A 22 A | 34 nC | Surface Mount | 29 mOhm | 1626 pF | 1.2 W | 40 V | 8-PowerVDFN | MOSFET (Metal Oxide) | POWERDI3333-8 | -55 °C | 175 ░C | 20 V | P-Channel | 4.5 V 10 V | 3 V | AEC-Q101 | Automotive |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.27 | |
| 6000 | $ 0.25 | |||
| 9000 | $ 0.24 | |||
| 15000 | $ 0.23 | |||
Description
General part information
DMPH4029LFGQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting, power-management functions, and DC-DC converters.
Documents
Technical documentation and resources