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DMPH4029LFG-7 - PowerDI3333-8

DMPH4029LFG-7

Active
Diodes Inc

40V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET

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DMPH4029LFG-7 - PowerDI3333-8

DMPH4029LFG-7

Active
Diodes Inc

40V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMPH4029LFG-7
Current - Continuous Drain (Id) @ 25°C22 A, 8 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
Input Capacitance (Ciss) (Max) @ Vds1626 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1.2 W
Rds On (Max) @ Id, Vgs29 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 0.27
4000$ 0.25
6000$ 0.24
10000$ 0.23
14000$ 0.22

Description

General part information

DMPH4029LFGQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting, power-management functions, and DC-DC converters.