TK10A55D(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 550V 10A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 550V 10A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK10A55D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	720 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Supplier Device Package	FET Type	Package / Case	Power Dissipation (Max)
Toshiba Semiconductor and Storage TK10A55D(STA4,Q,M)	550 V	1200 pF	10 V	24 nC	10 A	150 °C	30 V	720 mOhm	MOSFET (Metal Oxide)	Through Hole	TO-220SIS	N-Channel	TO-220-3 Full Pack	45 W

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General part information

N-Channel 550 V 10A (Ta) 45W (Tc) Through Hole TO-220SIS

Technical documentation and resources