Beta
⌘K
MOSFET N-CH 550V 10A TO220SIS
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Mounting Type | Supplier Device Package | FET Type | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 550 V | 1200 pF | 10 V | 24 nC | 10 A | 150 °C | 30 V | 720 mOhm | MOSFET (Metal Oxide) | Through Hole | TO-220SIS | N-Channel | TO-220-3 Full Pack | 45 W |