SPB18P06PGATMA1
ActiveInfineon Technologies
POWER MOSFET, P CHANNEL, 60 V, 18.7 A, 0.101 OHM, TO-263 (D2PAK), SURFACE MOUNT
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SPB18P06PGATMA1
ActiveInfineon Technologies
POWER MOSFET, P CHANNEL, 60 V, 18.7 A, 0.101 OHM, TO-263 (D2PAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | SPB18P06PGATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.7 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 28 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 81.1 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 130 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
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Description
General part information
SPB18P06 Series
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.