POWER MOSFET, P CHANNEL, 60 V, 18.7 A, 0.101 OHM, TO-263 (D2PAK), SURFACE MOUNT
| Part | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drain to Source Voltage (Vdss) | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 860 pF | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 20 V | 28 nC | 130 mOhm | P-Channel | 81.1 W | 18.7 A | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 60 V | AEC-Q101 | 10 V | Surface Mount | Automotive |