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DMP3017SFK-13 - Package Image for U-DFN2523-6

DMP3017SFK-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3017SFK-13 - Package Image for U-DFN2523-6

DMP3017SFK-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3017SFK-13
Current - Continuous Drain (Id) @ 25°C10.4 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]90 nC
Input Capacitance (Ciss) (Max) @ Vds4414 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-PowerUDFN
Power Dissipation (Max)1 W
Rds On (Max) @ Id, Vgs [Max]14 mOhm
Supplier Device PackageU-DFN2523-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

DMP3017SFGQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.