DMP3017SFGQ Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)
Diodes Inc DMP3017SFG-13	8-PowerVDFN	30 V	3 V	Surface Mount	P-Channel	25 V	POWERDI3333-8	10 mOhm	4.5 V 10 V	41 nC	2246 pF	MOSFET (Metal Oxide)	11.5 A	-55 °C	150 °C	940 mW
Diodes Inc DMP3017SFK-13	6-PowerUDFN	30 V	3 V	Surface Mount	P-Channel	25 V	U-DFN2523-6		4.5 V 10 V	90 nC	4414 pF	MOSFET (Metal Oxide)	10.4 A	-55 °C	150 °C		14 mOhm	1 W
Diodes Inc DMP3017SFGQ-13	8-PowerVDFN	30 V	3 V	Surface Mount	P-Channel	25 V	POWERDI3333-8	10 mOhm	4.5 V 10 V	41 nC	2246 pF	MOSFET (Metal Oxide)	11.5 A	-55 °C	150 °C	940 mW

Catalog

NRND = Not Recommended for New Design

Key Features

• Low RDS(ON) – ensures on state losses are minimized

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• ESD Protected Gate

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.