IRF1310NSTRLPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.036 OHM, TO-263AB, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.036 OHM, TO-263AB, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1310NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.8 W, 160 W
Rds On (Max) @ Id, Vgs [Max]	36 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Infineon Technologies IRF1310NSTRLPBF	42 A	Surface Mount	10 V	MOSFET (Metal Oxide)	N-Channel	3.8 W 160 W	110 nC	1900 pF	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	36 mOhm	20 V	D2PAK	-55 °C	175 ░C	100 V
Infineon Technologies IRF1310NPBF	42 A	Through Hole	10 V	MOSFET (Metal Oxide)	N-Channel		110 nC	1900 pF	4 V	TO-220-3	36 mOhm	20 V	TO-220AB	-55 °C	175 ░C	100 V

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