Beta
⌘K
POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.036 OHM, TO-263AB, SURFACE MOUNT
| Part | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | FET Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 42 A | Surface Mount | 10 V | MOSFET (Metal Oxide) | N-Channel | 3.8 W 160 W | 110 nC | 1900 pF | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 36 mOhm | 20 V | D2PAK | -55 °C | 175 ░C | 100 V |
Infineon Technologies | 42 A | Through Hole | 10 V | MOSFET (Metal Oxide) | N-Channel | 110 nC | 1900 pF | 4 V | TO-220-3 | 36 mOhm | 20 V | TO-220AB | -55 °C | 175 ░C | 100 V |