IPW65R070C6FKSA1
NRNDPOWER MOSFET, N CHANNEL, 53.5 A, 650 V, 0.063 OHM, 10 V, 3 V ROHS COMPLIANT: YES
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IPW65R070C6FKSA1
NRNDPOWER MOSFET, N CHANNEL, 53.5 A, 650 V, 0.063 OHM, 10 V, 3 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPW65R070C6FKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 53.5 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 391 W |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | PG-TO247-3-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPW65R070 Series
CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
Documents
Technical documentation and resources