POWER MOSFET, N CHANNEL, 53.5 A, 650 V, 0.063 OHM, 10 V, 3 V ROHS COMPLIANT: YES
| Part | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | Mounting Type | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-247-3 | PG-TO247-3-1 | 70 mOhm | Through Hole | MOSFET (Metal Oxide) | 53.5 A | 3.5 V | 170 nC | 3900 pF | 650 V | -55 °C | 150 °C | 10 V | 20 V | N-Channel | 391 W |