TSM500P02DCQ RFG

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Taiwan Semiconductor Corporation

MOSFET 2P-CH 20V 4.7A 6TDFN

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Taiwan Semiconductor Corporation

MOSFET 2P-CH 20V 4.7A 6TDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM500P02DCQ RFG

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	9.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	6-VDFN Exposed Pad
Power - Max [Max]	620 mW
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	6-TDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	800 mV

Part	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package
Taiwan Semiconductor Corporation TSM500P02DCQ RFG	2 P-Channel	150 °C	-50 °C	800 mV	Surface Mount	620 mW	1230 pF	9.6 nC	4.7 A	6-VDFN Exposed Pad	MOSFET (Metal Oxide)	20 V	50 mOhm	6-TDFN (2x2)

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General part information

Mosfet Array 20V 4.7A (Tc) 620mW Surface Mount 6-TDFN (2x2)

Technical documentation and resources