MOSFET 2P-CH 20V 4.7A 6TDFN
| Part | Configuration | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Mounting Type | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 2 P-Channel | 150 °C | -50 °C | 800 mV | Surface Mount | 620 mW | 1230 pF | 9.6 nC | 4.7 A | 6-VDFN Exposed Pad | MOSFET (Metal Oxide) | 20 V | 50 mOhm | 6-TDFN (2x2) |