IRF520NPBF
ActivePOWER MOSFET, N CHANNEL, 100 V, 9.7 A, 0.2 OHM, TO-220AB, THROUGH HOLE
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IRF520NPBF
ActivePOWER MOSFET, N CHANNEL, 100 V, 9.7 A, 0.2 OHM, TO-220AB, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRF520NPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.7 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 25 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 48 W |
| Rds On (Max) @ Id, Vgs | 200 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRF520 Series
The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Documents
Technical documentation and resources