Beta
⌘K
POWER MOSFET, N CHANNEL, 100 V, 9.7 A, 0.2 OHM, TO-220AB, THROUGH HOLE
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 9.7 A | TO-220AB | 10 V | 330 pF | MOSFET (Metal Oxide) | 100 V | Through Hole | TO-220-3 | 4 V | 20 V | 200 mOhm | N-Channel | 25 nC | 48 W |
Infineon Technologies | -55 °C | 175 ░C | 9.7 A | D2PAK | 10 V | 330 pF | MOSFET (Metal Oxide) | 100 V | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V | 20 V | 200 mOhm | N-Channel | 25 nC | 3.8 W 48 W |