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STD4NK100Z - MFG_DPAK(TO252-3)

STD4NK100Z

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1000 V, 5.4 OHM TYP., 2.2 A SUPERMESH POWER MOSFET IN A DPAK PACKAGE

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STD4NK100Z - MFG_DPAK(TO252-3)

STD4NK100Z

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 1000 V, 5.4 OHM TYP., 2.2 A SUPERMESH POWER MOSFET IN A DPAK PACKAGE

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Technical Specifications

Parameters and characteristics for this part

SpecificationSTD4NK100Z
Current - Continuous Drain (Id) @ 25°C2.2 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds601 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)90 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]6.8 Ohm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.47
10$ 2.05
100$ 1.63
500$ 1.38
1000$ 1.17
Digi-Reel® 1$ 2.47
10$ 2.05
100$ 1.63
500$ 1.38
1000$ 1.17
Tape & Reel (TR) 2500$ 1.11
5000$ 1.07

Description

General part information

STD4NK100Z Series

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.