STD4NK100Z Series

Automotive-grade N-channel 1000 V, 5.4 Ohm typ., 2.2 A SuperMESH Power MOSFET in a DPAK package

Catalog

Automotive-grade N-channel 1000 V, 5.4 Ohm typ., 2.2 A SuperMESH Power MOSFET in a DPAK package

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Package / Case	FET Type	Grade	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STD4NK100Z	90 W	18 nC	10 V	AEC-Q101	6.8 Ohm	Surface Mount	601 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	DPAK	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	Automotive	1000 V	4.5 V	2.2 A

Catalog

Automotive-grade N-channel 1000 V, 5.4 Ohm typ., 2.2 A SuperMESH Power MOSFET in a DPAK package

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.