IGC50T120T8RQX1SA1
ActiveInfineon Technologies
TRANS IGBT CHIP N-CH 1200V 3-PIN DIE WAFER
Deep-Dive with AI
Search across all available documentation for this part.
IGC50T120T8RQX1SA1
ActiveInfineon Technologies
TRANS IGBT CHIP N-CH 1200V 3-PIN DIE WAFER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IGC50T120T8RQX1SA1 |
|---|---|
| Current - Collector Pulsed (Icm) | 150 A |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Vce(on) (Max) @ Vge, Ic | 2.42 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IGC50T120 Series
Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses.
Documents
Technical documentation and resources