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SCT012H90G3AG - ROHM SCT3160KWAHRTL

SCT012H90G3AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 900 V, 12 MOHM TYP., 110 A IN AN H2PAK-7 PACKAGE

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Search across all available documentation for this part.

DocumentsUM1575+25
SCT012H90G3AG - ROHM SCT3160KWAHRTL

SCT012H90G3AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 900 V, 12 MOHM TYP., 110 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

DocumentsUM1575+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT012H90G3AG
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)18 V, 15 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]138 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3880 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)625 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs15.8 mOhm
Supplier Device PackageH2PAK-7
Vgs (Max) [Max]18 V
Vgs (Max) [Min]-5 V
Vgs(th) (Max) @ Id4.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 24.50
10$ 17.90
Digi-Reel® 1$ 24.50
10$ 17.90
Tape & Reel (TR) 1000$ 14.63
NewarkEach (Supplied on Cut Tape) 1$ 49.96
1$ 49.96
10$ 46.82
10$ 46.82
25$ 43.05
25$ 43.05
50$ 40.03
50$ 40.03
100$ 36.69
100$ 36.69
250$ 34.43
250$ 34.43
500$ 32.69
500$ 32.69
1000$ 30.73
1000$ 30.73

Description

General part information

SCT012H90G3AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.