SCT012H90G3AG Series

Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Catalog

Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type	Vgs(th) (Max) @ Id	Qualification	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Grade
STMicroelectronics SCT012H90G3AG	110 A	900 V	3880 pF	15.8 mOhm	138 nC	H2PAK-7	15 V 18 V	Surface Mount	18 V	-5 V	N-Channel	4.2 V	AEC-Q101	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	625 W	-55 °C	175 ░C	Automotive

Catalog

Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.