BFP640ESDH6327XTSA1

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Infineon Technologies

RF TRANS NPN 4.7V 46GHZ SOT343

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BFP640ESDH6327XTSA1

Active

Infineon Technologies

RF TRANS NPN 4.7V 46GHZ SOT343

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DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BFP640ESDH6327XTSA1

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	46 GHz
Gain [Max]	30 dB
Gain [Min]	7 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	2 dB
Noise Figure (dB Typ @ f) [Min]	0.6 dB
Operating Temperature	150 °C
Package / Case	SC-82A, SOT-343
Power - Max [Max]	200 mW
Supplier Device Package	PG-SOT343-4-2
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	4.7 V

BFP640 Series

Part	Gain	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Transistor Type	Operating Temperature	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Gain [Min]	Gain [Max]
Infineon Technologies BFP640FE6327	23 dBi	Surface Mount	110	200 mW	NPN	150 °C	1.2 dB	0.65 dB	4-SMD Flat Leads	40 GHz	4.5 V	50 mA	4-TSFP
Infineon Technologies BFP640ESDH6327XTSA1		Surface Mount	110	200 mW	NPN	150 °C	2 dB	0.6 dB	SC-82A SOT-343	46 GHz		50 mA	PG-SOT343-4-2	4.7 V	7 dB	30 dB
Infineon Technologies BFP640FESDH6327XTSA1		Surface Mount	110	200 mW	NPN	150 °C	1.7 dB	0.55 dB	4-SMD Flat Leads	46 GHz		50 mA	4-TSFP	4.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.46
		10	$ 0.39
		25	$ 0.37
		100	$ 0.29
		250	$ 0.27
		500	$ 0.23
		1000	$ 0.18
	Digi-Reel®	1	$ 0.46
		10	$ 0.39
		25	$ 0.37
		100	$ 0.29
		250	$ 0.27
		500	$ 0.23
		1000	$ 0.18
	Tape & Reel (TR)	3000	$ 0.18
Newark	Each (Supplied on Cut Tape)	1	$ 0.50
		10	$ 0.35
		25	$ 0.31
		50	$ 0.29
		100	$ 0.27
		250	$ 0.25
		500	$ 0.24
		1000	$ 0.23

Description

General part information

BFP640 Series

The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.

Documents

Technical documentation and resources