BFP640FE6327

Obsolete

Infineon Technologies

RF TRANS NPN 4.5V 40GHZ 4-TSFP

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Obsolete

Infineon Technologies

RF TRANS NPN 4.5V 40GHZ 4-TSFP

Technical Specifications

Parameters and characteristics for this part

Specification	BFP640FE6327

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	40 GHz
Gain	23 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.2 dB
Noise Figure (dB Typ @ f) [Min]	0.65 dB
Operating Temperature	150 °C
Package / Case	4-SMD, Flat Leads
Power - Max [Max]	200 mW
Supplier Device Package	4-TSFP
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.5 V

Part	Gain	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Transistor Type	Operating Temperature	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Gain [Min]	Gain [Max]
Infineon Technologies BFP640FE6327	23 dBi	Surface Mount	110	200 mW	NPN	150 °C	1.2 dB	0.65 dB	4-SMD Flat Leads	40 GHz	4.5 V	50 mA	4-TSFP
Infineon Technologies BFP640ESDH6327XTSA1		Surface Mount	110	200 mW	NPN	150 °C	2 dB	0.6 dB	SC-82A SOT-343	46 GHz		50 mA	PG-SOT343-4-2	4.7 V	7 dB	30 dB
Infineon Technologies BFP640FESDH6327XTSA1		Surface Mount	110	200 mW	NPN	150 °C	1.7 dB	0.55 dB	4-SMD Flat Leads	46 GHz		50 mA	4-TSFP	4.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount 4-TSFP

Technical documentation and resources