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DMN3731UFB4-7B - Package Image for X2-DFN1006-3

DMN3731UFB4-7B

Active
Diodes Inc

MOSFET BVDSS: 25V~30V X2-DFN1006-3 T&R 10K

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Search across all available documentation for this part.

DocumentsDatasheetPackage PDF+2
DMN3731UFB4-7B - Package Image for X2-DFN1006-3

DMN3731UFB4-7B

Active
Diodes Inc

MOSFET BVDSS: 25V~30V X2-DFN1006-3 T&R 10K

Deep-Dive with AI

DocumentsDatasheetPackage PDF+2

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3731UFB4-7B
Current - Continuous Drain (Id) @ 25°C1.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]5.5 nC
Input Capacitance (Ciss) (Max) @ Vds73 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)520 mW
Rds On (Max) @ Id, Vgs460 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.29
10$ 0.20
100$ 0.10
500$ 0.08
1000$ 0.06
2000$ 0.05
5000$ 0.04
Digi-Reel® 1$ 0.29
10$ 0.20
100$ 0.10
500$ 0.08
1000$ 0.06
2000$ 0.05
5000$ 0.04
Tape & Reel (TR) 10000$ 0.04
30000$ 0.04
50000$ 0.03
100000$ 0.03
250000$ 0.03

Description

General part information

DMN3731UFB4 Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.