DMN3731UFB4 Series

30V N-Channel Enhancement Mode MOSFET

Catalog

30V N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Diodes Inc DMN3731U-7	460 mOhm	Surface Mount	1.8 V 4.5 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	SOT-23-3	5.5 nC	8 V	73 pF	SC-59 SOT-23-3 TO-236-3	950 mV	900 mA
Diodes Inc DMN3731UFB4-7B	460 mOhm	Surface Mount	1.8 V 4.5 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V		5.5 nC	8 V	73 pF	3-XFDFN	950 mV	1.2 A	520 mW

Catalog

30V N-Channel Enhancement Mode MOSFET

Key Features

• 0.4mm Ultra Low Profile Package for Thin Application

• 0.6mm2 Package Footprint, 10 times Smaller than SOT23

• Low VGS(TH), Can Be Driven Directly From A Battery

• Low RDS(ON)

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.