FF23MR12W1M1PB11BPSA1

Obsolete

Infineon Technologies

MOSFET 2 IND 1200V 50A EASY1BM

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Obsolete

Infineon Technologies

MOSFET 2 IND 1200V 50A EASY1BM

Technical Specifications

Parameters and characteristics for this part

Specification	FF23MR12W1M1PB11BPSA1

Configuration	2 Independent
Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	124 nC
Input Capacitance (Ciss) (Max) @ Vds	3680 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	22.5 mOhm
Supplier Device Package	AG-EASY1BM-2
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5.5 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Configuration	Operating Temperature [Max]	Operating Temperature [Min]
Infineon Technologies FF23MR12W1M1PB11BPSA1	22.5 mOhm	1200 V	1.2 kV	Module	MOSFET (Metal Oxide)	5.5 V	50 A	124 nC	AG-EASY1BM-2	3680 pF	Chassis Mount	2 Independent	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 50A Chassis Mount AG-EASY1BM-2

Technical documentation and resources

No documents available