MOSFET 2 IND 1200V 50A EASY1BM
| Part | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Package / Case | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Configuration | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 22.5 mOhm | 1200 V | 1.2 kV | Module | MOSFET (Metal Oxide) | 5.5 V | 50 A | 124 nC | AG-EASY1BM-2 | 3680 pF | Chassis Mount | 2 Independent | 150 °C | -40 °C |