SPB21N10

Obsolete

Infineon Technologies

MOSFET N-CH 100V 21A TO263-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 21A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB21N10

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38.4 nC
Input Capacitance (Ciss) (Max) @ Vds	865 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Infineon Technologies SPB21N10	PG-TO263-3-2	80 mOhm	4 V	865 pF	Surface Mount	21 A	N-Channel	20 V	100 V	10 V	38.4 nC	MOSFET (Metal Oxide)	90 W	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 21A (Tc) 90W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources